Temperature dependence of excitonic photoluminescence and residual shallow donors in high-purity GaN/Al2O3

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 176-180

  Merz, C ^a   Kunzer, M ^a   Santic B ^a   Kaufmann, U ^a   Akasaki, I ^b   Amano, H ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

Free and bound excitons; GaN Al2O3; Photoluminescence

Indexed keywords

ALUMINA; ENERGY GAP; EXCITONS; IONIZATION OF SOLIDS; MATHEMATICAL MODELS; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS; SPECTRUM ANALYSIS; THERMAL EFFECTS;

BOUND EXCITONS; FREE EXCITONS; WURTZITE GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0042824856     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01858-2     Document Type: Article

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