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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 7006-7009

Etch properties of gallium nitride using chemically assisted ion beam etching (CAIBE)

(5) Lee, Weon Jeong a Kim, Hyeon Soo a Lee, Jae Won b Kim, Tae Il b Yeom, Geun Young a

a Sungkyunkwan University (South Korea)

b Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

AFM; CAlBE; Etch profile; Etch rate; GaN; Gas flow rate; Selectivity; XPS

Indexed keywords

EID: 0000166901 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.7006 Document Type: Article

Times cited : (4)

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