Resistless pattern definition and Si selective-area deposition using an ultrathin SiO2 mask layer treated by SiMCl3

Applied Physics Letters

Volumn 76, Issue 22, 2000, Pages 3203-3205

  Yasuda, T ^a,b   Nishizawa, M ^a,c   Yamasaki, S ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c JRCAT Angstrom Technology Partnership (ATP)   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000154030     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126629     Document Type: Article

References (21)

1. J. Aizenberg, A. J. Black, and G. M. Whiteside, Nature (London) 398, 495 (1999).
2. T. Mitsui, E. Hill, and E. Ganz, J. Appl. Phys. 85, 522 (1994).
3. M. Shibata, Y. Nitta, K. Fujita, and M. Ichikawa, Appl. Phys. Lett. 73, 2179 (1998).
4. T. Hashizume, S. Heike, M. I. Lutwyche, S. Watanabe, K. Nakajima, T. Nishi, and Y. Wada, Jpn. J. Appl. Phys., Part 2 35, L1085 (1996).
5. N. Kramer, N. Niesten, and C. Schonenberger, Appl. Phys. Lett. 67, 2989 (1995).
6. T.-C. Shen, C. Wang, G. C. Abeln, J. R. Tucker, J. W. Lyding, Ph. Avouris, and R. E. Walkup, Science 268, 1590 (1995).
7. K. Fujita, H. Watanabe, and M. Ichikawa, Appl. Phys. Lett 70, 2807 (1997).
8. T. Yasuda, D. S. Hwang, J. W. Park, K. Ikuta, S. Yamasaki, and K. Tanaka, Appl. Phys. Lett. 74, 653 (1999).
9. D. S. Hwang, T. Yasuda, K. Ikuta, S. Yamasaki, and K. Tanaka, Jpn. J. Appl. Phys., Part 1 37, 4204 (1998): Jpn. J. Appl. Phys., Part 2 37, L1087 (1998).
10. D. S. Hwang, T. Yasuda, K. Ikuta, S. Yamasaki, and K. Tanaka, Jpn. J. Appl. Phys., Part 1 37, 4204 (1998): Jpn. J. Appl. Phys., Part 2 37, L1087 (1998).
11. J. W. Klaus, A. W. Ott, J. M. Johnson, and S. M. George, Appl. Phys. Lett. 70, 1092 (1997).
12. S. M. George, A. W. Ott., and J. W. Klaus, J. Phys. Chem. 100, 13121 (1996).
13. P. A. Coon, P. Gupta, M. L. Wise, and S. M. George, J. Vac. Sci. Technol. A 10, 324 (1992).
14. See, for example, J. W. Coburn, J. Appl. Phys. 50, 5210 (1979).
15. D. Menzel and R. Gomer, J. Chem. Phys. 41, 3329 (1964); P. Redhead, Can. J. Phys. 42, 886 (1964).
16. D. Menzel and R. Gomer, J. Chem. Phys. 41, 3329 (1964); P. Redhead, Can. J. Phys. 42, 886 (1964).
17. M. L. Knotek and P. J. Feibelman, Phys. Rev. Lett. 40, 964 (1978).
18. T. Tatsumi, K. Akegawa, M. Hiroi, and J. Sakai, J. Cryst. Growth 120, 275 (1992).
19. T. Yasuda, D. S. Hwang, K. Ikuta, S. Yamasaki, and K. Tanaka, Mater. Res. Soc. Symp. Proc. 536, 439 (1999).
20. T. Yasuda, M. Nishizawa, S. Yamasaki, and K. Tanaka, J. Vac. Sci. Technol. B 18 (in press).
21. M. Baba and S. Matsui, J. Vac. Sci. Technol. B 12, 3716 (1994).