Comparative evaluation of ultrathin mask layers of SiO2, SiOxNy and SiNx for selective area growth of Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 4204-4208

  Hwang, Doo Sup ^a   Yasuda, Tetsuji ^b   Ikuta, Kazuyuki ^b   Yamasaki, Satoshi ^b   Tanaka, Kazunobu ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Incubation time; Selective area growth; Silicon nitride; Silicon nucleation; Silicon oxide; Ultrathin mask layer

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON NITRIDE; THIN FILMS;

SELECTIVE AREA GROWTH;

MASKS;

EID: 0032114496     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4204     Document Type: Review

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