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Volumn 453, Issue 1-3, 2000, Pages 119-129

Reaction of dimethylethylamine alane and ammonia on Si(100) during the atomic layer growth of AlN: Static SIMS, TPSIMS, and TPD

Author keywords

Chemical vapor deposition; Growth; Nitrides; Polycrystalline surfaces; Secondary ion mass spectroscopy; Semiconductor insulator interfaces; Surface chemical reaction; Thermal desorption spectroscopy

Indexed keywords


EID: 0000103059     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00328-9     Document Type: Article
Times cited : (6)

References (40)
  • 28
    • 33645440516 scopus 로고
    • Detection, determination and characterization of amines
    • S. Patai (Ed.), Wiley, New York
    • J. Zabicky, Detection, determination and characterization of amines, in: S. Patai (Ed.), The Chemistry of the Amino Group, Wiley, New York, 1968.
    • (1968) The Chemistry of the Amino Group
    • Zabicky, J.1
  • 40
    • 0031344212 scopus 로고    scopus 로고
    • F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, S. Strite (Eds.), MRS, MRS
    • J.S. Kuo, J.W. Rogers Jr., in: F.A. Ponce, S.P. DenBaars, B.K. Meyer, S. Nakamura, S. Strite (Eds.), Nitride Semiconductors, MRS, No. 482, MRS, 1997, p. 33.
    • (1997) Nitride Semiconductors , vol.482 , pp. 33
    • Kuo, J.S.1    Rogers J.W., Jr.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.