AlN films deposited by LP-MOCVD atomic layer deposition at lower temperatures using DMEAA and ammonia

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 249-254

  Kidder Jr , J N ^a   Kuo, J S ^a   Pearsall, T P ^a   Rogers Jr , J W ^a  

^a UNIVERSITY OF WASHINGTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMMONIA; AMORPHOUS FILMS; CRYSTAL MICROSTRUCTURE; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SILICON; X RAY DIFFRACTION;

ALANE; ALUMINUM NITRIDE; ATOMIC LAYER DEPOSITION; CRYSTALLINE FILM; DIMETHYLETHYLAMINE; GROWTH RATE; REACTANT FLOW;

FILM GROWTH;

EID: 0029746824     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (29)