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Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 438-443

Heteroepitaxial growth of Al film on Si using dimethylethylamine-alane

(3) Hayama, Kiyoteru a Togun, Tetsuji b Ishida, Makoto b

a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY (Japan)

b TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

Al film; DMEAA; Epitaxial growth; MOMBE

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; CRYSTAL ORIENTATION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SUBSTRATES;

DIMETHYLETHYLAMINE ALANE; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

METALLIC FILMS;

EID: 0031211918 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00174-7 Document Type: Article

Times cited : (3)

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