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Volumn 482, Issue , 1997, Pages 33-38
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Deposition sequences for atomic layer growth of AlN thin films on Si(100) using dimethylethylamine alane and ammonia
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Author keywords
[No Author keywords available]
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Indexed keywords
ADSORPTION;
AMINES;
AMMONIA;
DEPOSITION;
FILM GROWTH;
NITRIDES;
SECONDARY ION MASS SPECTROMETRY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING SILICON;
TEMPERATURE PROGRAMMED DESORPTION;
THIN FILMS;
ALUMINUM NITRIDES;
DIMETHYLETHYLAMINE ALANE;
SEMICONDUCTING FILMS;
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EID: 0031344212
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-482-33 Document Type: Conference Paper |
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Times cited : (4)
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References (22)
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