Heteroepitaxial growth of Al2O3 film on Si using dimethylethylamine-alane and O2

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 433-437

  Hayama, Kiyoteru ^a   Togun, Tetsuji ^b   Ishida, Makoto ^b  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Al2o3 on si; DMEAA; Epitaxial growth; MOMBE; SOI

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL STRUCTURE; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; THERMAL EFFECTS;

DIMETHYLETHYLAMINEALANE; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE); TRIMETHYLALUMINUM;

ALUMINA;

EID: 0031210733     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00173-5     Document Type: Article

References (8)

1. M. Ishida, I. Katakabe, N. Ohtake, T. Nakamura, Appl. Phys. Lett. 52 (1988) 1326.
2. K. Sawada, M. Ishida, N. Ohtake, T. Nakamura, Appl. Phys. Lett. 52 (1988) 1672.
3. M. Ishida, K. Sawada, S. Yamaguchi, T. Suzaki, T. Nakamura, Appl. Phys. Lett. 55 (6) (1989) 556.
4. M. Ishida, S. Yamaguchi, Y. Masa, Y. Hikita, T. Nakamura, J. Appl. Phys. 69 (1991) 8408.
5. K. Hayama, M. Ishida, T. Nakamura, Jpn. J. Appl. Phys. 33 (1994) 496.
6. M.G. Simmonds, W.L. Gladfelter, H. Li, P.H. Mcmurry, Mater. Res. Soc. Symp. Proc. 282 (1993) 317.
7. J. Han, K.F. Jensen, Y. Senzaki, W.L. Gladfelter, Appl. Phys. Lett. 64 (4) (1994) 425.
8. K. Hayama, H. Ohyama, T. Okuhara, M. Ishida, Appl. Surf. Sci., to be published.