Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 2, 1999, Pages 325-331

  Liu, Herng ^a,b   Rogers Jr , J W ^a  

^a University of Washington   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033420598     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581591     Document Type: Article

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