Measurement of Si(100) surface morphology by low energy ion scattering spectroscopy

Surface Science

Volumn 357-358, Issue , 1996, Pages 82-86

  Matsui, M ^a   Uchida, F ^a   Nakagawa, K ^a   Nishida, A ^a  

^a HITACHI LTD   (Japan)

Author keywords

Low energy ion scattering (LEIS); Molecular beam epitaxy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

AMORPHOUS SILICON; CRYSTAL STRUCTURE; CRYSTALLIZATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NANOSTRUCTURED MATERIALS; REACTIVE ION ETCHING; SENSITIVITY ANALYSIS; SILICON; SPECTROSCOPY; SURFACE ROUGHNESS; SURFACE STRUCTURE;

LOW ENERGY ION SCATTERING; STRUCTURAL SENSITIVITY; SURFACE CRYSTALLINITY; SURFACE DAMAGE; SURFACE PEAK INTENSITY; TOPOGRAPHY;

SURFACE MEASUREMENT;

EID: 11644258493     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00063-5     Document Type: Article

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