Low-energy ion scattering measurement of near-surface damage induced by the SiO2 dry-etching process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 2043-2050

  Matsui, Miyako ^a   Uchida, Fumihiko ^a   Katsuyama, Kiyomi ^a   Tokunaga, Takafumi ^a   Kojima, Masayuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

Channeling; Crystallinity; Damaged layer; Focusing; Low energy ion scattering spectroscopy; Post etch treatment; Reactive ion etching; Si(100)

Indexed keywords

BACKSCATTERING; DRY ETCHING; FOCUSING; ION BEAMS; REACTIVE ION ETCHING; SILICA; SURFACE STRUCTURE;

LOW ENERGY ION SCATTERING SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0032051075     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2043     Document Type: Article

References (7)

1. G. S. Oehrlein, J. G. Clabes, G. J. Coyle, J. C. Tsang and Y. H. Lee: J. Vac. Sci. Technol. A 4 (1986) 750.
2. G. S. Ochrlein and Y. H. Lee: J. Vac. Sci. Technol. A 5 (1987) 1585.
3. N. Aoto, M. Nakamori, S. Yamazaki and H. Hada: J. Appl. Phys. 77 (1995) 3899.
4. M. Aono, M. Katayama and E. Nomura: Nucl. Instrum. & Methods Phys. Res. B 64 (1992) 29.
5. K. Sumitomo, K. Tanaka, I. Katayama, F. Shoji and K. Oura: Surf. Sci. 242 (1991) 90.
6. M. Matsui, F. Uchida, K. Nakagawa and A. Nishida: Jpn. J. Appl. Phys. 35 (1996) 1937.
7. M. Matsui, F. Uchida, K. Nakagawa and A. Nishida: Surf. Sci. 357-358 (1996) 82.