In-situ after-treatment using low-energy dry-etching with a CF4O2 gas mixture to remove reactive ion etching damage

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. B, 1998, Pages 2330-2336

  Matsui, Miyako ^a   Uchida, Fumihiko ^a   Kojima, Masayuki ^a   Tokunaga, Takafumi ^a   Yamazaki, Kazuo ^a   Katsuyama, Kiyomi ^a   Arai, Hiromasa ^a  

^a HITACHI LTD   (Japan)

Author keywords

CF4 O2 gas; Dry etching damage; In situ after treatment; Reactive ion etching; Roughnes; Self aligned contact; SiO2

Indexed keywords

ANISOTROPY; ARGON; CRYSTAL DEFECTS; FLUOROCARBONS; REACTIVE ION ETCHING; SILICA; SURFACE ROUGHNESS;

SELF ALIGNED CONTACTS (SAC);

DRY ETCHING;

EID: 0032046525     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2330     Document Type: Article

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