A high-speed silicon-based few-electron memory with metaloxide-semiconductor field-effect transistor gain element

Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8594-8603

  Irvine, Andrew C ^a   Durrani, Zahid A K ^a   Ahmed, Haroon ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000076395     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373584     Document Type: Article

References (11)

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