Surfactant influence on the Ge heteroepilayer on Si(0 0 1) studied by X-ray diffraction and atomic force microscopy

Journal of Crystal Growth

Volumn 179, Issue 1-2, 1997, Pages 115-119

  Zhu, Haijun ^a   Jiang, Zuimin ^a   Xu, Amei ^a   Mao, Mingchun ^a   Hu, Dongzhi ^a   Zhang, Xiangjiu ^a   Liu, Xiaohan ^a   Huang, Darning ^a   Wang, Xun ^a   Sun, Jielin ^b   Li, Minqian ^b   Jiang, Xiaoming ^c  

^a FUDAN UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; ATOMIC FORCE MICROSCOPY; MORPHOLOGY; SEMICONDUCTING GERMANIUM; SUBSTRATES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; X RAY DIFFRACTION ANALYSIS;

HETEROEPILAYERS;

EPITAXIAL GROWTH;

EID: 0031195447     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00099-7     Document Type: Article

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