Low-temperature-processed (150-175°C) Ge/Pd-based Ohmic contacts (ρc∼1×10-6Ωcm2) to n-GaAs

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 509-

  Wang, L C ^a   Hao, P H ^a   Wu, B J ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b 3M COMPANY   (United States)

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Indexed keywords

EID: 0342405227     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.114552     Document Type: Article

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