Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 432-437

  Kimura, Akitaka ^a,b   Liu, Zhiyan ^a   Kuech, T F ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b NEC CORPORATION   (Japan)

Author keywords

A1. Crystal morphology; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials; B2. Semiconducting ternary compounds

Indexed keywords

ANTIMONY; GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; PHASE DIAGRAMS; SURFACE ACTIVE AGENTS; TERNARY SYSTEMS;

CRYSTAL MORPHOLOGY; LIGHT EMITTERS; SEMICONDUCTING TERNARY COMPOUNDS;

GALLIUM ALLOYS;

EID: 9944263979     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.061     Document Type: Conference Paper

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