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Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 312-317
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Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC
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Author keywords
A1. Characterization; A1. X ray diffraction; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting silicon compounds
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Indexed keywords
CHARACTERIZATION;
CRYSTAL STRUCTURE;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
GALLIUM NITRIDE;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SILICON CARBIDE;
X RAY DIFFRACTION ANALYSIS;
HIGH-RESOLUTION X-RAY DIFFRACTION (HR-XRD);
NUCLEATION LAYERS;
TRIMETHYLALUMINIUM (TMAL);
TRIMETHYLGALLIUM (TMGA);
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 9944249484
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.047 Document Type: Conference Paper |
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Times cited : (8)
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References (13)
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