InGaP/GaAsSb/GaAs DHBTs with low turn-on voltage and high current gain

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 169-172

  Yan, B P ^a   Hsu, C C ^a   Wang, X Q ^a   Bai, Y K ^a   Yang, E S ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FABRICATION; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036045632     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. DC characteristics of MOVPE-grown Npn InGaAs/InGaAsN DHBT
2. y base layers
3. Investigation of p-type GaInNAs for heterojunction bipolar transistor base layers
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5. GaAs-GaAsSb based heterojunction bipolar transistors
6. y system
7. GaAsSb for heterojunction bipolar transistors
8. Low turn-on voltage GsAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base
9. 0.06/GaAs double heterojunction bipolar transistor
10. Experimental comparison of base recombination currents in abrupt and graded AlGaAs/GaAs heterojunction bipolar transistors
11. High reliability InGaAs/GaAs HBT fabricated by self-aligned process