Growth and characterization of Sn-doped GaAsSb and GaAs epilayers on GaAs (001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2398-2401

  Uchitomi, N ^a   Takei, T ^a   Endoh, M ^a   Jinbo, Y ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; FUNCTIONS; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MICROANALYSIS; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TIN; X RAY DIFFRACTION;

DOPING CONCENTRATION; ELECTRON PROBE MICROANALYSIS (EPMA); LATTICE MISMATCHING; VAN DER PAUW CONFIGURATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 9744267493     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1795253     Document Type: Article

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