Molecular beam epitaxial growth and characterization of GaAs1-ySby layers on (111)B InP substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 B, 2002, Pages 1012-1015

  Higashino, Toshiyuki ^a   Kawamura, Yuichi ^a   Fujimoto, Masato ^a   Kondo, Atsushi ^a   Takasaki, Hideki ^a   Inoue, Naohisa ^a  

^a Osaka Prefecture University   (Japan)

Author keywords

(111); GaAsSb; InP; MBE; Type II

Indexed keywords

CHARACTERIZATION; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; ENERGY GAP; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE;

ENERGY SHIFTS; MOLE FRACTIONS;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0036478726     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.1012     Document Type: Conference Paper

References (20)