Studies on high resolution x-ray diffraction, optical and transport properties of InASxSb1-x/GaAs (x≤0.06) heterostructure grown using liquid phase epitaxy

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4989-4997

  Dixit, V K ^a   Bansal, Bhavtosh ^b   Venkataraman, V ^b   Bhat, H L ^b   Chandrasekharan, K S ^c   Arora, B M ^c  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b INDIAN INSTITUTE OF SCIENCE   (India)

^c TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LIQUID PHASE EPITAXY; OPTICAL PROPERTIES; SINGLE CRYSTALS; SUBSTRATES; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

ALLOY DISORDERS; DISLOCATION DENSITY; ELECTRONEGATIVITY; GALVANOMETRIC DEVICES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 9744253041     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784620     Document Type: Article

References (47)

1. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
2. J. C. Woolley and J. Warner, Can. J. Phys. 42, 1879 (1964).
3. J. J. Lee, J. D. Kim, and M. Razeghi, Appl. Phys. Lett. 70, 3266 (1997).
4. J. J. Lee and M. Razeghi, J. Cryst. Growth 221, 444 (2000).
5. A. Sher, A. B. Chen, W. E. Spicer, and C. K. Shik, J. Vac. Sci. Technol. A 3, 105 (1983).
6. J. J. Lee, J. D. Kim, and M. Razeghi, Appl. Phys. Lett. 73, 602 (1998).
7. J. C. Woolley and J. Warner, Can. J. Phys. 42, 1879 (1964).
8. J. Wu, W. Walukiewicz, and E. E. Haller, Phys. Rev. B 65, 233210 (2002).
9. C. Hermann and C. Weisbuch, Phys. Rev. B 15, 823 (1977).
10. J. C. Woolley and J. Warner, J. Electrochem. Soc. 111, 1142 (1964).
11. J. I. Chyi, S. Kalem, N. S. Kumar, C. W. Litton, and H. Morkoc, Appl. Phys. Lett. 53, 1092 (1988).
12. M. Y. Yen, J. Appl. Phys. 64, 3306 (1988).
13. R. M. Biefeld, J. Cryst. Growth 75, 255 (1986).
14. K. T. Huang, Y. Hsu, R. M. Cohen, and G. B. Stringfellow, J. Cryst. Growth 156, 311 (1995).
15. Y. Z. Gao, X. Y. Gong, H. Kan, M. Aoyama, and T. Yamaguchi, Jpn. J. Appl. Phys., Part 1 38, 1939 (1999).
16. A. S. Popov, A. M. Koinova, and S. L. Tzeneva, J. Cryst. Growth 186, 338 (1998).
17. L. O. Bubulac, A. M. Andrews, E. R. Gertner, and D. T. Cheung, Appl. Phys. Lett. 36, 734 (1980).
18. V. K. Dixit, B. V. Rodrigues, R. Venkataraghavan, K. S. Chandrasekharan, B. M. Arora, and H. L. Bhat, J. Cryst. Growth 235, 154 (2002).
19. V. K. Dixit, B. Bansal, V. Venkataraman, G. N. Subbanna, K. S. Chandrasekharan, B. M. Arora, and H. L. Bhat, Appl. Phys. Lett. 80, 2102 (2002).
20. R. Venkataraghavan, N. K. Udayashankar, B. V. Rodrigues, K. S. R. K. Rao, and H. L. Bhat, Bull. Mater. Sci. 22, 133 (1999).
21. V. K. Dixit, B. Bansal, V. Venkataraman, G. N. Subbanna, and H. L. Bhat, Appl. Phys. Lett. 81, 1630 (2002).
22. M. C. Wagener, J. R. Botha, and A. W. R. Leitch, Physica B 308-310, 866 (2001).
23. M. C. Wagener, J. R. Botha, and A. W. R. Leitch, J. Cryst. Growth 213, 51 (2000).
24. C. Y. Fong, W. Weber, and J. C. Phillips, Phys. Rev. B 14, 5387 (1976).
25. C. Bocchi, C. Ferrari, P. Franzosi, A. Bosacchi, and S. Franchi, J. Cryst. Growth 132, 427 (1993).
26. C. R. Wie, Mater. Sci. Eng., A R13, 1 (1994).
27. M. A. G. Halliwell, Appl. Phys. A: Solids Surf. 58, 135 (1994).
28. J. E. Ayers, J. Cryst. Growth 135, 71 (1994).
29. B. S. Yoo, M. A. McKee, S. G. Kim, and E. H. Lee, Solid State Commun. 88, 447 (1993).
30. D. K. Gaskill, G. T. Stauf, and N. Bottka, Appl. Phys. Lett. 58, 1905 (1991).
31. Y. Z. Gao, H. Kan, F. S. Gao, X. Y. Gong, and T. Yamaguchi, J. Cryst. Growth 234, 85 (2002).
32. J. I. Pankove, Optical Processes in Semiconductors (Dover Publications. New York, 1971).
33. E. J. Johnson, Semiconductors and Semimetals, edited by R. K. Willardson and A. C. Beer, (Academic, New York, 1967), Vol. 3, p. 154.
34. H. H. Wieder and A. R. Clawson, Thin Solid Films 15, 217 (1973).
35. B. Bansal, V. K. Dixit, V. Venkataraman, and H. L. Bhat, Appl. Phys. Lett. 82, 4720 (2003).
36. R. Chtourou, F. Bousbih, S. B. Bouzid, F. F. Charfi, J. C. Harmand, G. Ungaro, and L. Largeau, Appl. Phys. Lett. 80, 2075 (2002).
37. See, e.g., S. Adachi, Physical Properties of III-V Semiconductor Compounds (Wiley, New York, 1992), p. 275.
38. Y. P. Varshni, Physica (Utrecht) 34, 149 (1967).
39. M. Cardona, Phys. Status Solidi A 188, 1209 (2001).
40. L. Viña, S. Logothetidis, and M. Cardona, Phys. Rev. B 30, 1979 (1984).
41. R. Pässler, Phys. Rev. B 66, 085201 (2002).
42. R. Pässler, Phys. Rev. B 66, 085201 (2002).
43. B. Bansal, V. K. Dixit, V. Venkataraman, and H. L. Bhat, Physica E (Amsterdam) 20, 272 (2003).
44. S. Ozaki, S.-I. Boku, and S. Adachi, Phys. Rev. B 68, 235201 (2003).
45. V. W. L. Chin, R. J. Egan, and T. L. Tansley, J. Appl. Phys. 69, 3571 (1991).
46. D. C. Look and J. R. Sizelove, Phys. Rev. Lett. 82, 1237 (1999).
47. K. Seeger, Semiconductor Physics, 5th Ed. (Springer, Berlin, 1991).