Structural, optical, and electrical properties of bulk single crystals of InAsxSb(1-x) grown by rotatory Bridgman method

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1630-1632

  Dixit, V K ^a   Bansal, Bhavtosh ^a   Venkataraman, V ^a   Bhat, H L ^a   Subbanna, G N ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC CONTENT; BULK SINGLE CRYSTALS; CRYSTALLINITIES; ELECTRON DIFFRACTION STUDY; INAS; INFRARED TRANSMISSION SPECTRA; OPTICAL ENERGY GAP; ROOM TEMPERATURE;

ARSENIC; CARRIER MOBILITY; CRYSTAL GROWTH FROM MELT; ELECTRIC PROPERTIES; INDIUM ANTIMONIDES; INDIUM ARSENIDE;

SINGLE CRYSTALS;

EID: 79956040485     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1504163     Document Type: Article

References (18)

1. J. C. Woolley and J. Warner, Can. J. Phys. 42, 1879 (1964). cjp CJPHAD 0008-4204
2. W. M. Coderre and J. C. Woolley, Can. J. Phys. 46, 1207 (1968). cjp CJPHAD 0008-4204
3. C. E. A. Grigorescu and R. A. Stradling, Handbook of Thinfilm Devices edited by M. H. Francombe (Academic, New York, 2000), Vol. 2, p. 27.
4. M. Y. Yen, B. F. Levine, C. G. Bethea, K. K. Choi, and A. Y. Cho, Appl. Phys. Lett. 50, 927 (1987). apl APPLAB 0003-6951
5. J. D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu, and M. Razeghi, Appl. Phys. Lett. 68, 99 (1996). apl APPLAB 0003-6951
6. A. Rogalski and K. Jozwikowski, Infrared Phys. 29, 35 (1989). inf INFPAD 0020-0891
7. I. Kudman and L. Ekstrom, J. Appl. Phys. 39, 3385 (1968). jap JAPIAU 0021-8979
8. J. C. Woolley and J. Warner, J. Electrochem. Soc. 111, 1142 (1964). jes JESOAN 0013-4651
9. Y. Z. Gao, H. Kan, M. Aoyama, and T. Yamaguchi, Jpn. J. Appl. Phys. 39, 2520 (2000). jjb JAPNDE 0021-4922
10. Y. Z. Gao, H. Kan, F. S. Gao, X. Y. Gong, and T. Yamaguchi, J. Cryst. Growth 234, 85 (2002). jcr JCRGAE 0022-0248
11. D. Wu, B. Lane, H. Mohseni, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 74, 1194 (1999). apl APPLAB 0003-6951
12. B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi, Appl. Phys. Lett. 74, 3438 (1999). apl APPLAB 0003-6951
13. V. K. Dixit, B. V. Rodrigues, and H. L. Bhat, J. Cryst. Growth 217, 40 (2000). jcr JCRGAE 0022-0248
14. P. S. Dutta and T. R. Miller, J. Electron. Mater. 29, 956 (2000). jem JECMA5 0361-5235
15. C. H. Shih and E. A. Peretti, Trans. Am. Soc. Met. 48, 708 (1956). tsm TASEA7 0096-7416
16. R. J. Egan, V. W. L. Chin, and T. L. Tansley, J. Appl. Phys. 75, 2473 (1994). jap JAPIAU 0021-8979
17. V. W. L. Chin, R. J. Egan, and T. L. Tansley, J. Appl. Phys. 69, 3571 (1991). jap JAPIAU 0021-8979
18. G. R. Allan, H. A. Mackenzie, J. J. Hunter, and B. S. Wherrett, Phys. Status Solidi B 149, 383 (1988). psb PSSBBD 0370-1972