Characterization of secondary phases formed during MOVPE growth of InSbBi mixed crystals

Journal of Crystal Growth

Volumn 213, Issue 1, 2000, Pages 51-56

  Wagener, M C ^a   Botha, J R ^a   Leitch, A W R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

INCLUSIONS; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MATERIALS; PHASE TRANSITIONS; PRECIPITATION (CHEMICAL); SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INDIUM ANTIMONIDE BISMUTH; MIXED CRYSTALS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033733903     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00328-6     Document Type: Article

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