In As1-ySby single crystals with cutoff wavelength of 8-12 μm grown by a new method

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1939-1940

  Gao, Yu Zhu ^a   Gong, Xiu Ying ^b   Kan, Hirofumi ^b   Aoyama, Mitsuru ^a   Yamaguchi, Tomuo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

Composition; Cutoff wavelength; Electron mobility; InAsSb; Melt epitaxy; Single crystal

Indexed keywords

EID: 0006508826     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1939     Document Type: Article

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