Substitutional incorporation of arsenic from GaAs substrates into MOVPE grown InSbBi thin films

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 866-869

  Wagener, M C ^a   Botha, J R ^a   Leitch, A W R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

Arsenic; InSbBi; Raman scattering

Indexed keywords

ARSENIC; CRYSTAL LATTICES; ENERGY GAP; INFRARED SPECTROSCOPY; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

LATTICE CONTRACTION;

THIN FILMS;

EID: 0035673001     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00924-3     Document Type: Article

References (10)