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Volumn 394, Issue 1-2, 2001, Pages 179-187

A comparative study of sputtered TaCx and WCx films as diffusion barriers between Cu and Si

Author keywords

Cu diffusion; Diffusion barrier; Tantalum carbide; Tungsten carbide

Indexed keywords

COPPER; DIFFUSION; SILICON; SPUTTERING; SUBSTRATES; TANTALUM CARBIDE; THERMODYNAMIC STABILITY; TUNGSTEN CARBIDE;

EID: 0035882149     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0040-6090(01)01173-7     Document Type: Article
Times cited : (12)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.