Direct CoSi2 thin-film formation with homogeneous nanograin-size distribution by oxide-mediated silicidation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2299-2302

  Chang, Juin Jie ^a   Liu, Chuan Pu ^b   Chen, Shih Wei ^b   Chang, Chih Chia ^b   Hsieh, Tsung Eong ^a   Wang, Ying Lang ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; COBALT; CRYSTALLIZATION; DIFFUSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

DC MAGNETRON SPUTTERING; DIFFUSION CHANNELS; GRAIN SIZE DISTRIBUTION; SILICIDATION;

NANOSTRUCTURED MATERIALS;

EID: 9744221150     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1781660     Document Type: Article

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