Suppression of cobalt silicide agglomeration using nitrogen (N2+) implantation

IEEE Electron Device Letters

Volumn 19, Issue 5, 1998, Pages 163-166

  Sun, Wein Town ^a   Liaw, Ming Chi ^b   Hsu, Charles Ching Hsiang ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; COBALT COMPOUNDS; ION IMPLANTATION; NITROGEN; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE;

MOSFET DEVICES;

EID: 0006331492     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.669736     Document Type: Article

References (11)

1. +-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation," Jpn. J. Appl. Phys., vol. 36, no. 3B, p. 1364, 1997.
2. A. I. Chou. C. Lin, K. Kumar, P. Chowdhury, M. Gardner, M. Gillmer, J. Fulford, and J. C. Lee, "The effects of nitrogen implant into gate electrode on the characteristics of dual-gate MOSFET's with ultrathin oxide and oxynitrides," in Proc. IEEE Int. Reliab. Phys. Symp., 1997, p. 174.
3. A. Lin, W. Chen, S. Banerjee, J. Lee, and C. Magee, "Cobalt disilicide as dopant diffusion source for polysilicon gates in MOS devices," J. Electron. Mater., vol. 22, no. 6, 1993.
4. A. E. Morgan, E. K. Broadbent, M. Delfino, B. Coulman, and D. K. Sadana, "Characteristics of a self-aligned cobalt silicide process," J. Electmchem. Soc., vol. 134, no. 4, 1987.
5. 2," J. Electrochem. Soc., vol. 140, no. 1, p. 200, 1993.
6. 2 thin-film couples," J. Appl. Phys., vol. 68, no. 3, p. 1050, 1990.
7. S. Pramanick, Y. N. Erokhin, and G. A. Rozgonyi, "Morphological instability and Si diffusion in nanoscale cobalt silicide films formed on heavily phosphorus doped polycrystalline silicon," Appl. Phys. Lett., vol. 63, p. 1933, 1993.
8. 2 MOS process," Appl. Surf. Sci., vol. 73, p. 277, 1993.
9. +-poly gate metal-oxide-semiconductor transistors," Jpn. J. Appl. Phys., vol. 36, no. 2A, pp. L80, 1997.
10. Z. G. Xiao, G. A. Rozgonyi, C. A. Canovai, and C. M. Osburn, "Agglomeration of cobalt silicide films," in Proc. Mater. Res. Soc. Symp., vol. 202, 1991, p. 101.
11. S. Pramanick, B. Patnaik, and G. A. Rozgonyi, "Capillary instabilities in cobalt silicide thin films," in Proc. Mater. Res. Soc. Symp., vol. 355, 1995, p. 593.