Defect generation during epitaxial growth of CoSi2 on miniature sized (100) Si substrate and its effect on electrical properties

Materials Research Society Symposium - Proceedings

Volumn 402, Issue , 1996, Pages 167-172

  Byun, Jeong Soo ^a   Seon, Jeong Min ^a   Park, Jin Won ^a   Hwang, Hyunsang ^a   Kim, Jae Jeong ^a  

^a ULSI Lab of LG Semicon Co Ltd

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT; DEFECTS; EFFECTS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; SUBSTRATES; TITANIUM;

DEEP SUBMICRON DEVICE; POLYCRYSTALLINE SILICON GATE; SPUTTER SYSTEM; STANDARD LITHOGRAPHIC PROCESS; THERMAL OXIDATION;

COBALT COMPOUNDS;

EID: 0029734597     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)