A novel technique for ultrathin CoSi2 layers: Oxide mediated epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1650-1654

  Tung, Raymond T ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Co silicide; Epitaxial silicides; Silicon suboxide; Template growth

Indexed keywords

EID: 0000750596     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1650     Document Type: Article

References (11)

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10. K. Inoue and R. T. Tung: unpublished.
11. H. Sumi, T. Nishihara, Y. Sugano, H. Masuya and M. Takasu: Int. Electron Device Meet. (1990) p. 249.