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Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 405-409

Photoluminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure

(5) Surma, Barbara a Misiuk, Andrzej a Wnuk, Artur a Bukowski, Andrzej a,b Rzodkiewicz, Witold a

a ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

b Cemat Silicon SA (Poland)

Author keywords

Heat treatment; Hydrostatic pressure; Implantation; Nitrogen; Silicon

Indexed keywords

AGGLOMERATION; ANNEALING; CRYSTAL GROWTH FROM MELT; DOPING (ADDITIVES); HYDROSTATIC PRESSURE; MICROELECTRONICS; NITROGEN; PHOTOLUMINESCENCE; POINT DEFECTS; SOLUBILITY;

DIFFUSIVITY; DONOR-ACCEPTOR RECOMBINATION; SILICON ON ISOLATOR (SOI) STRUCTURE; VOID DEFECTS;

SILICON WAFERS;

EID: 9644294281 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2004.09.117 Document Type: Conference Paper

Times cited : (5)

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