The mechanisms and application of dislocation related radiation for silicon based light sources

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 217-222

  Steinman, E A ^a   Kveder, V V ^a   Grimmeiss, H G ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b LUND UNIVERSITY   (Sweden)

Author keywords

Light Sources; Luminescence; Oxygen; Pair Recombination

Indexed keywords

DEFECTS; LIGHT SOURCES; LUMINESCENCE; OXYGEN; PASSIVATION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE DISTRIBUTION;

DISLOCATION CONFIGURATIONS; DISLOCATION GENERATION; DISLOCATION RELATED LUMINESCENCES; DONOR-ACCEPTOR-PAIR RECOMBINATION; HYDROGEN PASSIVATION; PAIR RECOMBINATION; TECHNICAL APPLICATIONS; TEMPERATURE DEPENDENCE;

LIGHT;

EID: 17544366390     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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