Effects of thermal annealing on the structural properties of sputtered W-Si-N diffusion barriers

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 325-330

  Vomiero, Alberto ^a,b   Marchi, Enrico Boscolo ^a,c   Frabboni, Stefano ^d   Quaranta, Alberto ^a,c   Mea, Gianantonio Della ^a,c   Mariotto, Gino ^c   Felisari, Laura ^d   Butturi, Mariangela ^e  

^a LABORATORI NAZIONALI DI LEGNARO   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF TRENTO   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e UNIVERSITY OF FERRARA   (Italy)

Author keywords

Sputtering; Structural properties; Ternary films of transition metal si n

Indexed keywords

CHEMICAL REACTIONS; COMPOSITION; DIFFUSION; MAGNETRON SPUTTERING; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DIFFUSION BARRIERS; ELECTRICAL RESISTIVITY; STRUCTURAL PROPERTIES; TERNARY FILMS OF TRANSITION METAL-SI-N;

ANNEALING;

EID: 9644291629     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.110     Document Type: Conference Paper

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