Electrochemical etching of n-type silicon based on carrier injection from a back side p-n junction

Electrochemical and Solid-State Letters

Volumn 6, Issue 6, 2003, Pages

  Badel, X ^a   Linnros, J ^a   Kleimann, P ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; DIFFUSION IN SOLIDS; DISSOLUTION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTROCHEMISTRY; ETCHING; HYDROFLUORIC ACID; INTERFACES (MATERIALS); POSITIVE IONS; SUBSTRATES;

AQUEOUS HYDROFLUORIC ACID; CARRIER INJECTION; ELECTROCHEMICAL ETCHING; PHOTOELECTROCHEMICAL ETCHING; RADIATION IMAGING DETECTOR; SILICON PORE ARRAYS;

SILICON WAFERS;

EID: 0038137197     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1566533     Document Type: Article

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