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Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 459-462

Erratum: Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation": (Materials Science in Semiconductor Processing (2004) 7 (459-462) DOI:10.1016/j.mssp.2004.09.021);Growth and visible photoluminescence of highly oriented (100) zinc oxide film synthesized on silicon by plasma immersion ion implantation

(10) Mei, Y F a Fu, Ricky K Y a Siu, G G a Chu, Paul K b Li, Z M b Yang, C L b Ge, W K b Tang, Z K b Cheung, W Y c Wong, S P c

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

c CHINESE UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

Annealing; Photoluminescence; ZnO

Indexed keywords

ANNEALING; ION IMPLANTATION; PHOTOLUMINESCENCE; SILICON; SOLAR CELLS; SURFACE TOPOGRAPHY; THERMAL EFFECTS; VAPOR DEPOSITION;

PLASMA IMMERSION; ROOM TEMPERATURE; SUBSTRATE BIAS; VACCUM CHAMBERS;

ZINC OXIDE;

EID: 9544247761 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2005.01.001 Document Type: Erratum

Times cited : (10)

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