A triple channel HEMT on InP (camel HEMT) for large-signal high-speed applications

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 32-37

  Mäher, Hassan ^a   Décobert, Jean ^a   Falcou, Aline ^a   Le Pallec, Michel ^a   Post, George ^a   Nissim, Yves I ^a   Scavennec, André ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; IMPACT IONIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

HIGH BREAKDOWN VOLTAGE TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032756095     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737438     Document Type: Article

References (6)

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6. M. Chertouk, H. Heib, D. Xu, S. Krauss, W. Klein, G. Böhm, G.Trankle, and G. Weimann, "Metamorphic InAlAs/InGaAs HEMT's on GaAs substrates with composite channels and /max of 350 GHz," Proc. IPRM, Hokkaido, Japan, 1995, p. 737.