Charge injection and transport model in organic light-emitting diodes with aluminum cathodes prepared by ion beam assisted deposition

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 205-212

  Jeong, Soon Moon ^a   Koo, Won Hoi ^a   Choi, Sang Hun ^a   Jo, Sung Jin ^a   Baik, Hong Koo ^a   Lee, Se Jong ^b   Song, Kie Moon ^c  

^a Yonsei University   (South Korea)

^b Kyungsung University   (South Korea)

^c Konkuk University   (South Korea)

Author keywords

Ion beam assisted deposition; Junction resistance; Lifetime; OLED

Indexed keywords

ALUMINUM; CATHODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTROLUMINESCENCE; ELECTROOPTICAL DEVICES; EVAPORATION; ION BEAM ASSISTED DEPOSITION; MATHEMATICAL MODELS; NITRIC ACID; SCANNING ELECTRON MICROSCOPY; TRANSPORT PROPERTIES;

CHARGE INJECTION; JUNCTION RESISTANCE; LIFETIME; ORGANIC LIGHT EMITTING DIODES (OLED);

LIGHT EMITTING DIODES;

EID: 9544243708     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.08.009     Document Type: Article

References (30)

1. Tang CW, VanSlyke SA. Appl Phys Lett 1987;51:913.
2. Burroughes JH, Bradley DDC, Brown AR, Marks RN, Mackay K, Friend RH, et al. Nature (London) 1990;347:539.
3. Rothberg LJ, Lovinger AJ. J Mater Res 1996;11:3174.
4. Burrows PE, Bulovic V, Forrest SR, Sapochak LS, McCarty DM, Thompson ME. Appl Phys Lett 1994;65:2922.
5. Vimrova V, Nespurek S, Kuzel R, Schnabel W. Synth Met 1994;67:103.
6. McElvain J, Antoniadis H, Hueschen MR, Miller JN, Roitman DM, Sheats JR, et al. J Appl Phys 1996;80:6002.
7. Do LM, Oyamada M, Koike A, Han EM, Yamamoto N, Fujira M. Thin Solid Films 1996;273:209.
8. Papadimitrakopoulos F, Zhang XM, Thomsen DL, Higginson KA. Chem Mater 1996;8:1363.
9. Sawateev VN, Yakimov AV, Davidov D, Pogreb RM, Neumann R, Avny Y. Appl Phys Lett 1997;71:3344.
10. Liao LS, Hung LS, Chan WC, Ding XM, Sham TK, Bellow I, et al. Appl Phys Lett 1999;75:1619.
11. Suzuki H, Hikita M. Appl Phys Lett 1996;68:2276.
12. Gu G, Bulovic V, Burrows PE, Forrest SR, Thompson ME. Appl Phys Lett 1996;68:2606.
13. Hung LS, Liao LS, Lee CS, Lee ST. J Appl Phys 1999;86:4607.
14. Henry BM, Dinelli F, Zhao K-Y, Grovenor CRM, Kolosov OV, Briggs GAD, et al. Thin Solid Films 1999;355-356:500.
15. Jamieson EHH, Windle AH. J Mater Sci 1983;18:64.
16. Tropsha YG, Harvey NG. J Phys Chem B 1997;101:2259.
17. Erlat AG, Spontak RJ, Clarke RP, Robinson TC, Haaland PD, Tropsha Y, et al. J Phys Chem B 1999;103:6047.
18. da Suva Sobrinho AS, Czeremuszkin G, Latreche M, Wertheimer MR. J Vac Sci Tech A 2000;18:149.
19. Henry BM, Dinelli F, Zhao K-Y, Erlat AG, Grovenor CRM, Briggs GAD. In: Proceedings of the Society of Vacuum Coalers Soc 42nd Annual Tech Conf Proc, Chicago, USA., April 17-22, 1999. p. 403.
20. Blom PWM, de Jong MJM, Vleggaar JJM. Appl Phys Lett 1996;68:3308.
21. Antoniadis H, Abkowitz MA, Hsieh BR. Appl Phys Lett 1994;65:2030.
22. Burrows PE, Forrest SR. Appl Phys Lett 1994;64:2285.
23. Burrows PE, Shen Z, Bulovic V, McCarty DM, Forrest SR. J Appl Phys 1996;79:7991.
24. Meier M, Karg S, Riess W. J Appl Phys 1997;82:1961.
25. Aziz H, Xu G. J Phys Chem 1997;101:4009.
26. Parthasarathy G, Burrows PE, Khalfin V, Kozlov VG, Forrest SR. Appl Phys Lett 1998;72:2138.
27. Parthasarathy G, Adachi C, Burrows PE, Forrest SR. Appl Phys Lett 2000;76:2128.
28. Haskal EI, Curioni A, Seidler PF, Andreoni W. Appl Phys Lett 1997;68:2606.
29. Johansson N, Osada T, Stafstrom S, Salaneck WR, Parente C, Dos Santos DA, et al. J Chem Phys 1999;111:2157.
30. Kido J, Matsumoto T. Appl Phys Lett 1998;73:2866.