MOSFET drain current reduction under Fowler-Nordheim and channel hot carrier injection before gate oxide breakdown

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 175-180

  Gerardin, Simone ^a   Cester, Andrea ^a   Paccagnella, Alessandro ^a   Ghidini, Gabriella ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

MOSFETs; Reliability; Ultra thin gate oxides

Indexed keywords

AMPLIFIERS (ELECTRONIC); LEAKAGE CURRENTS; LOW PASS FILTERS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT; GATE OXIDE BREAKDOWN; SOFT BREAKDOWN (SB); ULTRA-THIN GATE OXIDES;

MOSFET DEVICES;

EID: 9544242749     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.114     Document Type: Conference Paper

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