New physics-based, predictive compact model for small-geometry MOSFET's including two-dimensional calculations with a close link to process and layout data

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1996, Pages 147-150

  Kloes, A ^a   Kostka, A ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MOSFET DEVICES;

CURRENT EQUATIONS; POISSONS EQUATION; TWO DIMENSIONAL TECHNIQUE;

SEMICONDUCTOR DEVICE MODELS;

EID: 0030415562     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)