-
1
-
-
0001019819
-
+) structure with heterojunctions
-
+) structure with heterojunctions," Fiz. Tekh. Poluprovodn. 1, 436 [Sov. Phys. Semicond. 1, 358 (1967)].
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(1966)
Fiz. Tekh. Poluprovodn.
, vol.1
, pp. 436
-
-
Alferov, Zh.I.1
-
2
-
-
0012079336
-
-
+) structure with heterojunctions," Fiz. Tekh. Poluprovodn. 1, 436 [Sov. Phys. Semicond. 1, 358 (1967)].
-
(1967)
Sov. Phys. Semicond.
, vol.1
, pp. 358
-
-
-
4
-
-
0000352544
-
Laser with supersmall divergence of radiation
-
Alferov, Zh. I., et al., 1974, "Laser with supersmall divergence of radiation," Fiz. Tekh. Poluprovodn. 8, 832 [Sov. Phys. Semicond. 8, 541 (1974)].
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Fiz. Tekh. Poluprovodn.
, vol.8
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-
Alferov, Zh.I.1
-
5
-
-
0016117239
-
-
Alferov, Zh. I., et al., 1974, "Laser with supersmall divergence of radiation," Fiz. Tekh. Poluprovodn. 8, 832 [Sov. Phys. Semicond. 8, 541 (1974)].
-
(1974)
Sov. Phys. Semicond.
, vol.8
, pp. 541
-
-
-
6
-
-
0000071919
-
Semiconductor laser with distributed feedback in second order
-
Alferov, Zh. I., et al., 1975, "Semiconductor laser with distributed feedback in second order," Pis'ma Zh. Tekh. Fiz. 1, 645 [Sov. Tech. Phys. Lett. 1, 286 (1975)].
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(1975)
Pis'ma Zh. Tekh. Fiz.
, vol.1
, pp. 645
-
-
Alferov, Zh.I.1
-
7
-
-
0007301143
-
-
Alferov, Zh. I., et al., 1975, "Semiconductor laser with distributed feedback in second order," Pis'ma Zh. Tekh. Fiz. 1, 645 [Sov. Tech. Phys. Lett. 1, 286 (1975)].
-
(1975)
Sov. Tech. Phys. Lett.
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, pp. 286
-
-
-
9
-
-
20944448311
-
-
-6 cm," Fiz. Tekh. Poluprovodn. 19, 1108 [Sov. Phys. Semicond. 19, 679 (1985)].
-
(1985)
Sov. Phys. Semicond.
, vol.19
, pp. 679
-
-
-
10
-
-
0001151692
-
AlGaAs-heterostructure quantum wells grown by low temperature LPE
-
Alferov, Zh. I., et al., 1986a, "AlGaAs-heterostructure quantum wells grown by low temperature LPE," Pis'ma Zh. Tekh. Fiz. 12, 1089 [Sov. Tech. Phys. Lett. 12, 450 (1986)].
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(1986)
Pis'ma Zh. Tekh. Fiz.
, vol.12
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-
-
Alferov, Zh.I.1
-
11
-
-
0041793319
-
-
Alferov, Zh. I., et al., 1986a, "AlGaAs-heterostructure quantum wells grown by low temperature LPE," Pis'ma Zh. Tekh. Fiz. 12, 1089 [Sov. Tech. Phys. Lett. 12, 450 (1986)].
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(1986)
Sov. Tech. Phys. Lett.
, vol.12
, pp. 450
-
-
-
13
-
-
0007227386
-
-
2)," Pis'ma Zh. Tekh. Fiz. 12, 210 [Sov. Tech. Phys. Lett. 12, 87 (1986)].
-
(1986)
Sov. Tech. Phys. Lett.
, vol.12
, pp. 87
-
-
-
14
-
-
0009541754
-
2, L = 1150 μm, 300 K)
-
2, L = 1150 μm, 300 K)," Fiz. Tekh. Poluprovodn. 21, 824 [Sov. Phys. Semicond. 21, 503 (1987)].
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(1987)
Fiz. Tekh. Poluprovodn.
, vol.21
, pp. 824
-
-
Alferov, Zh.I.1
-
15
-
-
0009191289
-
-
2, L = 1150 μm, 300 K)," Fiz. Tekh. Poluprovodn. 21, 824 [Sov. Phys. Semicond. 21, 503 (1987)].
-
(1987)
Sov. Phys. Semicond.
, vol.21
, pp. 503
-
-
-
16
-
-
0001369835
-
2, efficience = 59%)
-
2, efficience = 59%)," Fiz. Tekh. Poluprovodn. 22, 1031 [Sov. Phys. Semicond. 22, 650 (1988)].
-
(1988)
Fiz. Tekh. Poluprovodn.
, vol.22
, pp. 1031
-
-
Alferov, Zh.I.1
-
17
-
-
6244231386
-
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2, efficience = 59%)," Fiz. Tekh. Poluprovodn. 22, 1031 [Sov. Phys. Semicond. 22, 650 (1988)].
-
(1988)
Sov. Phys. Semicond.
, vol.22
, pp. 650
-
-
-
18
-
-
0000842703
-
2, T = 300 K) with quantum well restriction by short period superlattice of variable period
-
2, T = 300 K) with quantum well restriction by short period superlattice of variable period," Pis'ma Zh. Tekh. Fiz. 14, 1803 [Sov. Tech. Phys. Lett. 14, 782 (1988)].
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(1988)
Pis'ma Zh. Tekh. Fiz.
, vol.14
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-
-
Alferov, Zh.I.1
-
19
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0342730700
-
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2, T = 300 K) with quantum well restriction by short period superlattice of variable period," Pis'ma Zh. Tekh. Fiz. 14, 1803 [Sov. Tech. Phys. Lett. 14, 782 (1988)].
-
(1988)
Sov. Tech. Phys. Lett.
, vol.14
, pp. 782
-
-
-
20
-
-
0000095009
-
Phototransistor utilizing a GaAs-AlAs heterojunction
-
Alferov, Zh. I., F. A. Ahmedov, V. I. Korol'kov, and V. G. Nikitin, 1973, "Phototransistor utilizing a GaAs-AlAs heterojunction," Fiz. Tekh. Poluprovodn. 7, 1159 [Sov. Phys. Semicond. 7, 780 (1973)].
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(1973)
Fiz. Tekh. Poluprovodn.
, vol.7
, pp. 1159
-
-
Alferov, Zh.I.1
Ahmedov, F.A.2
Korol'kov, V.I.3
Nikitin, V.G.4
-
21
-
-
0015724793
-
-
Alferov, Zh. I., F. A. Ahmedov, V. I. Korol'kov, and V. G. Nikitin, 1973, "Phototransistor utilizing a GaAs-AlAs heterojunction," Fiz. Tekh. Poluprovodn. 7, 1159 [Sov. Phys. Semicond. 7, 780 (1973)].
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(1973)
Sov. Phys. Semicond.
, vol.7
, pp. 780
-
-
-
22
-
-
0001041015
-
Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and realization of continuous emission at room temperature
-
Alferov, Zh. I., V. M. Andreev, D. Z. Garbuzov, Yu. V Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, 1970, "Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and realization of continuous emission at room temperature," Fiz. Tekh. Poluprovodn. 4, 1826 [Sov. Phys. Semicond. 4, 1573 (1971)].
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(1970)
Fiz. Tekh. Poluprovodn.
, vol.4
, pp. 1826
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Garbuzov, D.Z.3
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Morozov, E.P.5
Portnoi, E.L.6
Trofim, V.G.7
-
23
-
-
0001041014
-
-
Alferov, Zh. I., V. M. Andreev, D. Z. Garbuzov, Yu. V Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, 1970, "Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and realization of continuous emission at room temperature," Fiz. Tekh. Poluprovodn. 4, 1826 [Sov. Phys. Semicond. 4, 1573 (1971)].
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(1971)
Sov. Phys. Semicond.
, vol.4
, pp. 1573
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24
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0015079919
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1 - xAs-GaAs heterojunctions
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1 - xAs-GaAs heterojunctions," Fiz. Tekh. Poluprovodn. 4, 2378 [Sov. Phys. Semicond. 4, 2047 (1971)].
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Fiz. Tekh. Poluprovodn.
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Alferov, Zh.I.1
Andreev, V.M.2
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-
25
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0015079919
-
-
1 - xAs-GaAs heterojunctions," Fiz. Tekh. Poluprovodn. 4, 2378 [Sov. Phys. Semicond. 4, 2047 (1971)].
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(1971)
Sov. Phys. Semicond.
, vol.4
, pp. 2047
-
-
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26
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0042618809
-
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Inventor's Certificate No. 392875 [in Russian], Application No. 1677436, priority as of July 19, 1971
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Alferov, Zh. I., V. M. Andreev, R. F. Kazarinov, E. L. Portnoi, and R. A. Suris, 1971, "Semiconductor optical quantum generator," Inventor's Certificate No. 392875 [in Russian], Application No. 1677436, priority as of July 19, 1971.
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(1971)
Semiconductor Optical Quantum Generator
-
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Alferov, Zh.I.1
Andreev, V.M.2
Kazarinov, R.F.3
Portnoi, E.L.4
Suris, R.A.5
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27
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0002120139
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V semiconducting and of their solid solutions
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Budapest, October 1970, edited by G. Szigeti (Academiai Kiado, Budapest)
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V semiconducting and of their solid solutions," in Proceedings of the International Conference on Physics and Chemistry of Semiconductor Heterojunctions and Layer Structures, Budapest, October 1970, edited by G. Szigeti (Academiai Kiado, Budapest), Vol. 1, p. 93.
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(1971)
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, vol.1
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Alferov, Zh.I.1
Andreev, V.M.2
Konnikov, S.G.3
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28
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1 - xAs solid solutions
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1 - xAs solid solutions," Fiz. Tekh. Poluprovodn. 4, 578 [Sov. Phys. Semicond. 4, 481 (1971)].
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Fiz. Tekh. Poluprovodn.
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Alferov, Zh.I.1
Andreev, V.M.2
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29
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1 - xAs solid solutions," Fiz. Tekh. Poluprovodn. 4, 578 [Sov. Phys. Semicond. 4, 481 (1971)].
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Sov. Phys. Semicond.
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30
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0001260596
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1 - xAs-P-GaAs heterojunctions
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1 - xAs-P-GaAs heterojunctions," Fiz. Tekh. Poluprovodn. 2, 1016 [Sov. Phys. Semicond. 2, 843 (1969)].
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Fiz. Tekh. Poluprovodn.
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31
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Sov. Phys. Semicond.
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32
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Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system
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Alferov, Zh. I., V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and D. N. Tret'yakov, 1968b, "Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system," Fiz. Tekh. Poluprovodn. 2, 1545 [Sov. Phys. Semicond. 2, 1289 (1969)].
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Alferov, Zh. I., V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and D. N. Tret'yakov, 1968b, "Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system," Fiz. Tekh. Poluprovodn. 2, 1545 [Sov. Phys. Semicond. 2, 1289 (1969)].
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Sov. Phys. Semicond.
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34
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Recombination radiation in epitaxial structures in the system AlAs-GaAs
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Moscow, July 23-29, 1968 [in Russian] (Nauka, Leningrad)
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Alferov, Zh. I., V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and D. N. Tret'yakov, 1969, "Recombination radiation in epitaxial structures in the system AlAs-GaAs," in Proceedings of the Ninth International Conference on Semiconductor Structures, Moscow, July 23-29, 1968 [in Russian] (Nauka, Leningrad), Vol. 1, p. 534.
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Proceedings of the Ninth International Conference on Semiconductor Structures
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35
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0001450189
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1 - xAs solid solutions with variable forbidden gap
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1 - xAs solid solutions with variable forbidden gap," Fiz. Tekh. Poluprovodn. 3, 541 [Sov. Phys. Semicond. 3, 460 (1970)].
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Fiz. Tekh. Poluprovodn.
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Alferov, Zh.I.1
Andreev, V.M.2
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36
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84884591429
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Sov. Phys. Semicond.
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37
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Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions
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Alferov, Zh. I., V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and A. A. Yakovenko, 1969b, "Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions," Fiz. Tekh. Poluprovodn. 3, 930 [Sov. Phys. Semicond. 3, 785 (1970)].
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Alferov, Zh.I.1
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Alferov, Zh. I., V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and A. A. Yakovenko, 1969b, "Spontaneous radiation sources based on structures with AlAs-GaAs heterojunctions," Fiz. Tekh. Poluprovodn. 3, 930 [Sov. Phys. Semicond. 3, 785 (1970)].
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Sov. Phys. Semicond.
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39
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40
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33646411298
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Sov. Phys. Semicond.
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41
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0000137626
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AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold
-
Alferov, Zh. I., V. M. Andreev, E. L. Portnoi, and M. K. Trukan, 1969, "AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold," Fiz. Tekh. Poluprovodn. 3, 1328 [Sov. Phys. Semicond. 3, 1107 (1970)].
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0001534148
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Alferov, Zh. I., V. M. Andreev, E. L. Portnoi, and M. K. Trukan, 1969, "AlAs-GaAs heterojunction injection lasers with a low room-temperature threshold," Fiz. Tekh. Poluprovodn. 3, 1328 [Sov. Phys. Semicond. 3, 1107 (1970)].
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Sov. Phys. Semicond.
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43
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0001019690
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0.5 P
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Pis'ma Zh. Tekh. Fiz.
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Alferov, Zh.I.1
Arsent'ev, I.N.2
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44
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0342286862
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0.5 P," Pis'ma Zh. Tekh. Fiz. 1, 305 [Sov. Tech. Phys. Lett. 1, 147 (1975)].
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Sov. Tech. Phys. Lett.
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, pp. 147
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45
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Red injection heterolasers in the Ga-In-As-P system
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Alferov, Zh. I., I. N. Arsent'ev, D. Z. Garbuzov, S. G. Konnikov, and V. D. Rumyantsev, 1975b, "Red injection heterolasers in the Ga-In-As-P system," Pis'ma Zh. Tekh. Fiz. 1, 406 [Sov. Tech. Phys. Lett. 1, 191 (1975)].
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Pis'ma Zh. Tekh. Fiz.
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Alferov, Zh.I.1
Arsent'ev, I.N.2
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46
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Alferov, Zh. I., I. N. Arsent'ev, D. Z. Garbuzov, S. G. Konnikov, and V. D. Rumyantsev, 1975b, "Red injection heterolasers in the Ga-In-As-P system," Pis'ma Zh. Tekh. Fiz. 1, 406 [Sov. Tech. Phys. Lett. 1, 191 (1975)].
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Sov. Tech. Phys. Lett.
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, pp. 191
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47
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0009880786
-
An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
-
Alferov, Zh. I., N. A. Bert, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, A. O. Kosogov, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, A. V. Sakharov, V. M. Ustinov, A. F. Tsatsul'nikov, Yu. M. Shernyakov, and D. Bimberg, 1996, "An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix," Fiz. Tekh. Poluprovodn. 30, 351 [Sov. Phys. Semicond. 30, 194 (1996)].
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Bert, N.A.2
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Kosogov, A.O.6
Krestnikov, I.L.7
Ledentsov, N.N.8
Lunev, A.V.9
Maksimov, M.V.10
Sakharov, A.V.11
Ustinov, V.M.12
Tsatsul'nikov, A.F.13
Shernyakov, Yu.M.14
Bimberg, D.15
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48
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49
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-
Alferov, Zh. I., D. Z. Garbuzov, V. S. Grigor'ev, Yu. V. Zhilyaev, L. V. Kradinova, V. I. Korol'kov, E. P. Morozov, O. A. Ninua, E. L. Portnoy, V. D. Prochukhan, and M. K. Trukan, 1967, "Injection luminescence of epitaxial heterojunctions in the GaP-GaAs system," Sov. Phys. Solid State 9, 208.
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Zhilyaev, Yu.V.4
Kradinova, L.V.5
Korol'kov, V.I.6
Morozov, E.P.7
Ninua, O.A.8
Portnoy, E.L.9
Prochukhan, V.D.10
Trukan, M.K.11
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51
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1 - xAs-GaAs heterojunctions and in GaAs p-n junctions," Fiz. Tekh. Poluprovodn. 3, 1054 [Sov. Phys. Semicond. 3, 885 (1970)].
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Sov. Phys. Semicond.
, vol.3
, pp. 885
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52
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A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
-
Alferov, Zh. I., N. Yu. Gordeev, S. V. Zaitsev, P. S. Kop'ev, I. V. Kochnev, V. V. Khomin, I. L. Krestnikov, N. N. Ledentsov, A. V. Lunev, M. V. Maksimov, S. S. Ruvimov, A. V. Sakharnov, A. F. Tsatsul'nikov, Yu. M. Shernyakov, and D. Bimberg, 1996, "A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds," Fiz. Tekh. Poluprovodn. 30, 357 [Sov. Phys. Semicond. 30, 197 (1996)].
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