X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1322-1324

  Erlacher, A ^a   Ambrico, M ^b,f   Capozzi, V ^c,f   Augelli, V ^d,f   Jaeger, H ^e   Ullrich, B ^a  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b CNR   (Italy)

^c UNIVERSITY OF FOGGIA   (Italy)

^d UNIVERSITY OF BARI   (Italy)

^e MIAMI UNIVERSITY   (United States)

^f Nucleare/Sezione di Bari   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EVAPORATION; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SPUTTERING; X RAY ANALYSIS;

DENSITY OF STATE; DEVICE ARCHITECTURE; GLASS SUBSTRATE; OPTICAL APPLICATIONS;

THIN FILMS;

EID: 9244226545     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/019     Document Type: Article

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