Preparation of thin film GaAs on glass by pulsed-laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4977, Issue , 2003, Pages 180-187

  Ullrich, Bruno ^a   Erlacher, Artur ^a   Yano, Satoshi ^a   Schroeder, Raoul ^a   Gerasimov, Timofey G ^a   Haugan, Heather J ^b  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Photocurrent; Photoluminescence; Pulsed laser deposition; Thin film GaAs; Transmission; X ray diffraction Raman spectroscopy

Indexed keywords

LASER ABLATION; LIGHT ABSORPTION; NEODYMIUM LASERS; PHOTOCURRENTS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

GALLIUM ARSENIDE THIN FILM; GALLIUM ARSENIDE WAFER; MICRO-RAMAN MEASUREMENT;

PULSED LASER DEPOSITION;

EID: 0345293245     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.472848     Document Type: Conference Paper

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