Urbach energy parameter of flash evaporated amorphous gallium arsenide films

Journal of Non-Crystalline Solids

Volumn 299-302, Issue PART 1, 2002, Pages 328-332

  Dias da Silva, J H ^a   Campomanes, R R ^a  

^a SÃO PAULO STATE UNIVERSITY UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; LIGHT ABSORPTION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

FLASH EVAPORATED FILMS;

AMORPHOUS FILMS;

EID: 0036539891     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(01)01189-9     Document Type: Conference Paper

References (14)

1. Hydrogenated Amorphous Silicon