GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding

Applied Physics Letters

Volumn 82, Issue 22, 2003, Pages 3892-3894

  Chandrasekaran, N ^a   Soga, T ^a   Jimbo, T ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; EPITAXIAL GROWTH; RESIDUAL STRESSES; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THERMAL STRESS; TRANSMISSION ELECTRON MICROSCOPY;

COVALENT BONDS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038646296     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1581976     Document Type: Article

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