Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation

Applied Physics Letters

Volumn 68, Issue 21, 1996, Pages 2985-2986

  Ullrich, B ^a   Ezumi, H ^b   Keitoku, S ^c   Kobayashi, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b Shimane College of Nursing   (Japan)

^c Hiroshima Women's University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000748974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116671     Document Type: Article

References (6)

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2. S Keitoku, H. Ezumi, H. Osono, and M. Ohta, Jpn. J. Appl. Phys. INS 34, L138 (1995).
3. H. Ezumi and S. Keitoku, Jpn. J. Appl. Phys. INS 32, 1783 (1993).
4. B. Ullrich, A. Kazlauskas, and T. Kobayashi, Appl. Phys. Lett. AIP 66, 1590 (1995).
5. J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971).
6. B. Ullrich and C. Bouchenaki, Jpn. J. Appl. Phys. INS 30, L1285 (1991).