Hafnium or zirconium high-k fab cross-contamination issues

IEEE Transactions on Semiconductor Manufacturing

Volumn 17, Issue 4, 2004, Pages 582-589

  Vermeire, Bert ^a,b   Pandit, Viraj S ^a   Parks, Harold G ^a   Raghavan, Srini ^a   Ramkumar, Krishnaswami ^c   Jeon, Joong ^d  

^a University of Arizona   (United States)

^b Ridgetop Group Inc   (United States)

^c CYPRESS SEMICONDUCTOR   (United States)

^d ADVANCED MICRO DEVICES   (United States)

Author keywords

Cleaning; Cross contamination; Hafnium dioxide (HfO2); High k dielectric; Zirconium dioxide (ZrO2)

Indexed keywords

CLEANING; CONTAMINATION; DIELECTRIC PROPERTIES; ELECTROCHEMISTRY; ETCHING; SILICATES; ZIRCONIA;

CROSS CONTAMINATION; HAFNIUM DIOXIDE (HFO2); HIGH-K DIELECTRIC; ZIRCONIUM DIOXIDE (ZRO2);

HAFNIUM COMPOUNDS;

EID: 9144272781     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2004.835726     Document Type: Article

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