Carrier-density-wave transport and local internal electric field measurements in biased metal-oxide-semiconductor n-Si devices using contactless laser photo-carrier radiometry

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1240-1249

  Mandelis, Andreas ^a,b   Pawlak, Micha ^a,c   Shaughnessy, Derrick ^b  

^a RUHR UNIVERSITY BOCHUM   (Germany)

^b UNIVERSITY OF TORONTO   (Canada)

^c NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; INFRARED RADIATION; IRON; PHONONS; PROBABILITY; RADIOMETRY;

OPTICAL DISSOCIATION; PHOTO-CARRIER RADIOMETRY; SHOCKLEY-REED RECOMBINATION;

MOS DEVICES;

EID: 9144270108     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/005     Document Type: Article

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