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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 605-607

Room-Temperature Operation of In0.5Ga0.5 As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

(5) Nee, Tzer En a Yeh, Nien Tze a Shiao, Po Wen a Chyi, Jen Inn a Lee, Ching Ting a

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

Author keywords

Electroluminescence; Molecular beam epitaxy; Photoluminescence; Quantum dot lasers; Vicinal substrates

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CURRENTS; ELECTROLUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

SELF-ORGANIZED QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0032621797 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.38.605 Document Type: Article

Times cited : (7)

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