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Volumn 5301, Issue , 2004, Pages 87-98

LBNL 4-side buttable CCD package development

Author keywords

Astronomical imaging; CCD; Focal plane detectors; Lawrence berkeley national laboratory

Indexed keywords

AERIAL PHOTOGRAPHY; IMAGE SENSORS; PRODUCT DESIGN; QUALITY ASSURANCE; RADAR IMAGING; SPACE APPLICATIONS; TEMPERATURE DISTRIBUTION; THERMOANALYSIS;

EID: 8844246378     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.531954     Document Type: Conference Paper
Times cited : (7)

References (14)
  • 1
    • 0030410535 scopus 로고    scopus 로고
    • A 200 × 200 CCD image sensor fabricated on high-resistivity silicon
    • S. E. Holland, et al., "A 200 × 200 CCD Image Sensor Fabricated on High-Resistivity Silicon," IEDM Technical Digest, 911, 1996.
    • (1996) IEDM Technical Digest , vol.911
    • Holland, S.E.1
  • 3
    • 0037251173 scopus 로고    scopus 로고
    • Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon
    • S.E. Holland, et al., "Fully Depleted, Back-Illuminated Charge-Coupled Devices Fabricated on High-Resistivity Silicon," IEEE Transactions on Electronic Devices 50 (3), 2003.
    • (2003) IEEE Transactions on Electronic Devices , vol.50 , Issue.3
    • Holland, S.E.1
  • 4
    • 0000287398 scopus 로고    scopus 로고
    • Characterization of a fully depleted CCD on high resistivity silicon
    • R.J. Stover, et al., "Characterization of a Fully Depleted CCD on High Resistivity Silicon," in, Proceedings SPIE 3019, 1997.
    • (1997) Proceedings SPIE , vol.3019
    • Stover, R.J.1
  • 5
    • 0032639880 scopus 로고    scopus 로고
    • Quantum efficiency of a back-illuminated CCD imager: An optical approach
    • D. E. Groom, et al., "Quantum Efficiency of a Back-illuminated CCD Imager: An Optical Approach," in, Proceedings SPIE 3649, 1999.
    • (1999) Proceedings SPIE , vol.3649
    • Groom, D.E.1
  • 6
    • 11844266552 scopus 로고    scopus 로고
    • Measurement of lateral charge diffusion in thick, fully depleted, back-Illuminated CCDs,"
    • A. Karcher et al., "Measurement of Lateral Charge Diffusion in Thick, Fully Depleted, Back-Illuminated CCDs," IEEE Transactions on Electronic Devices 50 (3), 2003.
    • (2003) IEEE Transactions on Electronic Devices , vol.50 , Issue.3
    • Karcher, A.1
  • 8
    • 18644386139 scopus 로고    scopus 로고
    • Proton radiation damage in high-resistivity N-Type silicon CCDs
    • C. J. Bebek, et al., "Proton Radiation Damage in High-Resistivity N-Type Silicon CCDs," in, Proceedings of SPIE 4669, 2002.
    • (2002) Proceedings of SPIE , vol.4669
    • Bebek, C.J.1
  • 9
    • 0036624322 scopus 로고    scopus 로고
    • Proton radiation damage in p-channel CCDs fabricated on high-resistivity silicon,"
    • LBNL-49316
    • C.J. Bebek, et al., "Proton Radiation Damage in p-Channel CCDs Fabricated On High-Resistivity Silicon," LBNL-49316, IEEE Trans. Nucl. Science 49, 2002.
    • (2002) IEEE Trans. Nucl. Science , vol.49
    • Bebek, C.J.1
  • 14
    • 8844267055 scopus 로고    scopus 로고
    • http://outgassing.nasa.gov/cgi/sectionc/sectionc_html.sh


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.